| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having excellent photoelectric conversion characteristics by effectively making use of resources. <P>SOLUTION: A fragile layer is formed on a single crystal silicon substrate, and a first impurity silicon layer is formed on one surface side of the single crystal silicon substrate, and further a first electrode formed on the first impurity silicon layer. After the one surface side of the support substrate and the first electrode are pasted and heat-treated, a single silicon layer is formed in the support substrate by separating the single crystal silicon substrate with a fragile layer as a boundary. After performing crystal defect repair processing or crystal defect removal processing of the single crystal silicon layer, using stock gas at least containing silicon based gas, the stock gas is activated by plasma under the atmospheric pressure or near the atmospheric pressure to cause single crystal silicon layer epitaxial growth and a second impurity silicon layer is formed on the epitaxial grown surface side. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
