SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a high-quality GaAs crystal thin film by the use of a low-cost Si substrate having excellent heat dissipation characteristics. SOLUTION: A semiconductor substrate is provided, where the substrate includes an Si substrate, a Ge layer crystal-grown on the substrate and having an isolated island shape, and a functional layer crystal-grown on the Ge layer. The Ge layer is formed in an island shape which does not exceed twice the distance which crystal defects move when annealed at the annealing temperature and in the annealing time. Alternatively, the Ge layer is formed in an island shape which does not cause separation because of a stress caused by a difference in thermal expansion coefficient between the Ge layer and the Si substrate when annealed at the annealing temperature. COPYRIGHT: (C)2009,JPO&INPIT