METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITION INTO COPPER METALLIZATION OF A SEMICONDUCTOR DEVICE

摘要

A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve el ectromig ration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer (304), where the recessed feature is at least substantially filled with planarized bulk Cu metal (322), heat-treating the bulk Cu metal and the dielectric layer in the presence of H2, N2 or NH3, or a combination thereof, and selectively depositing a Ru metal film (324) on the heat-treated planarized bulk Cu metal.