发明名称 |
Organic Luminescence Transistor Device and Manufacturing Method Thereof |
摘要 |
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on an upper surface of the substrate; an insulation film provided on an upper surface of the assistance electrode layer; a first electrode provided locally on an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having the same size as the first electrode in a plan view; an electric-charge injection layer provided on the upper surface of the insulation film at an area not provided with the first electrode and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on the luminescent layer.
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申请公布号 |
US2009179208(A1) |
申请公布日期 |
2009.07.16 |
申请号 |
US20060085631 |
申请日期 |
2006.11.28 |
申请人 |
DAI NIPPON PRINTING CO., LTD;PIONEER CORPORATION;NEC CORPORATION |
发明人 |
OBATA KATSUNARI;HANDA SHINICHI;HATA TAKUYA;NAKAMURA KENJI;YOSHIZAWA ATSUSHI;ENDO HIROYUKI |
分类号 |
G09F9/30;H01L21/30;H01L27/32;H01L51/50;H05B33/10;H05B33/22;H05B33/26 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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