发明名称 Organic Luminescence Transistor Device and Manufacturing Method Thereof
摘要 The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on an upper surface of the substrate; an insulation film provided on an upper surface of the assistance electrode layer; a first electrode provided locally on an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having the same size as the first electrode in a plan view; an electric-charge injection layer provided on the upper surface of the insulation film at an area not provided with the first electrode and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on the luminescent layer.
申请公布号 US2009179208(A1) 申请公布日期 2009.07.16
申请号 US20060085631 申请日期 2006.11.28
申请人 DAI NIPPON PRINTING CO., LTD;PIONEER CORPORATION;NEC CORPORATION 发明人 OBATA KATSUNARI;HANDA SHINICHI;HATA TAKUYA;NAKAMURA KENJI;YOSHIZAWA ATSUSHI;ENDO HIROYUKI
分类号 G09F9/30;H01L21/30;H01L27/32;H01L51/50;H05B33/10;H05B33/22;H05B33/26 主分类号 G09F9/30
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