| 摘要 |
A formation method of the semiconductor device is provided, which prevents the fuse attack fault in the fuse repair process. The fuse(110) is formed on the semiconductor substrate(100). The insulating layer(140) and nitride film(130) are formed on the upper part of the whole surface including fuse. The inter-layer insulating film(120) and metal line(150) are formed in the upper part of nitride film. The inter-layer insulating film of the fuse blowing domain is etched and the nitride film is exposed. The sum total of the nitride film and insulating layer is formed in a thickness of 1500-2000Å. The nitride film is exposed by the second etching after the first etching.
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