Verfahren zum Steuern der Morphologie während der Bildung einer epitaktischen Schicht

摘要

A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800° C. and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided.