MULTILAYER MAGNETIC DEVICE, PROCESS FOR THE PRODUCTION THEREOF, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY AND LOGIC GATE USING SUCH A DEVICE

摘要

This multilayer magnetic device comprises, on a substrate, alternating magnetic metallic layers M and oxide, hydride or nitride layers O. The number of M layers is at least equal to two. The M layers are continuous, have a thickness of less than or equal to 5 nanometres and their magnetization would be parallel to the plane of the layers in the absence of the O layers. Moreover, there is, for a temperature range equal to or greater than ambient temperature, an interfacial magnetic anisotropy perpendicular to the plane of the layers at the M/O and O/M interfaces, capable of orienting the magnetization of the M layers substantially perpendicular to the plane of the layers.