| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a programming method of a flash memory element for preventing occurrence of a program disturbance phenomenon wherein the threshold voltage of a program-inhibited cell is changed, by increasing a channel boosting potential. <P>SOLUTION: By turning on all of memory cells in a string, a ground voltage is applied to a first bit line connected with a first string including the cell to be programmed while all of channel areas are electrically connected, and a program inhibiting voltage is applied to a second bit line connected with a second string including the program-inhibited cell so that the all of channel areas in the second string are uniformly precharged. When the programming operation is executed, the channel boosting occurs in the all of channel areas in the second string including the program-inhibited cell. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
