| 发明名称 |
HIGH DENSITY 45NM SRAM USING SMALL-SIGNAL NON-STROBED REGENERATIVE SENSING |
| 摘要 |
A memory device includes a plurality of cells comprising CMOS structures. A non-strobed regenerative sense-amplifier (NSR-SA) is coupled to the cells and employs offset compensation and avoids strobe timing uncertainty to increase read-access speeds.
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| 申请公布号 |
US2009067221(A1) |
申请公布日期 |
2009.03.12 |
| 申请号 |
US20080105410 |
申请日期 |
2008.04.18 |
| 申请人 |
CHANDRAKASAN ANANTHA P;VERMA NAVEEN |
发明人 |
CHANDRAKASAN ANANTHA P.;VERMA NAVEEN |
| 分类号 |
G11C11/00;H01S4/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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