| 摘要 |
PROBLEM TO BE SOLVED: To improve a manufacturing yield of semiconductor apparatus. SOLUTION: The substrate processing apparatus has a heating chamber 2 for carrying a substrate 9 therein, a heating mechanism 3B for heat-treating the substrate 9, an ion generating mechanism 4 for ionizing a supplied gas to generate ions 12, and a dust collecting plate 5 for electrifying a dust to be charged to the opposite polarity of the ions 12. COPYRIGHT: (C)2009,JPO&INPIT
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