| 摘要 |
A complementary semiconductor device comprising an n-channel transistor and a p-channel transistor, including: the n-channel transistor including a gate insulating film and a first metal gate electrode formed on the gate insulating film and having a first compound layer including a first metal (M1) and silicon (Si); and the p-channel transistor including a gate insulating film and a second metal gate electrode formed on the gate insulating film and having a second compound layer including the first metal (M1), a second metal (M2), and silicon (Si), wherein the composition of the first compound layer is represented by a composition formula: M1Six (1<=x), and the composition of the second compound layer is represented by a composition formula: M1M2Siy (0<y<=0.5).
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