| 摘要 |
PURPOSE:To remarkably improve the workability of the title element by a method wherein, after an intermediate layer is laminated alternately, a photoresist pattern is formed on the region excluding a bonding pad part and a scribe-lined part, and a Deep UV Ray is made to irradiate on the whole surface using the resist as a mask. CONSTITUTION:A photoresist layer 110 is formed by patterning, and then a DeepUV Ray is made to irradiate on the whole surface using said layer 110 as a mask. The intermediate layer and the like consisting of the PGMA of the region 111, whereon the photoresist layer 110 is not formed, is sensitive to the DeepUV ray, but the interme diate layer consisting of the PGMA located under the photoresist layer 110 is not sensitive to the light at all. This is because the light sensed by the PGMA is in the far ultraviolet ray region of 250mm or below, and when PMIPK is used on the photoresist layer 110, 90% or more of the light of the wavelength of far ultraviolet ray region of 250mm or less is absorbed by the PMIPK when the film thickness of the PMIPK is formed at 1.0mum or below. Then, the region 11 which is photosensed by the DeepUV is removed by developing using the intermediate layer and the like consisting of PGMA. At this time, the developig solution wherein MEK, aceton and alcohol and the like are mixed is used, the photoresist layer 110 consisting of PMIPK can also be removed. |
