发明名称 |
FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HAVING INCREASED INTRINSIC STRESS |
摘要 |
By providing a highly stressed interlayer dielectric material, the performance of at least one type of transistor may be increased due to an enhanced strain-inducing mechanism. For instance, by providing a highly compressive silicon dioxide of approximately 400 Mega Pascal and more as an interlayer dielectric material, the drive current of the P-channel transistors may be increased by 2% and more while not unduly affecting the performance of the N-channel transistors.
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申请公布号 |
US2008203487(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070873547 |
申请日期 |
2007.10.17 |
申请人 |
HOHAGE JOERG;FINKEN MICHAEL;STRECK CHRISTOF;RICHTER RALF |
发明人 |
HOHAGE JOERG;FINKEN MICHAEL;STRECK CHRISTOF;RICHTER RALF |
分类号 |
H01L21/469;H01L29/78 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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