METHOD FOR FORMING METAL LINE OF FLASH MEMORY SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wire of a flash memory device is provided to prevent the loss of a lower metal wire by forming an amorphous carbon layer as an etch stop layer of an upper metal wire. A semiconductor substrate(200) is divided into a cell region and a peripheral circuit region. An aluminium wire(206) is formed on each region of the cell region and the peripheral circuit region as a lower metal wire. An amorphous carbon layer is formed on the semiconductor substrate as an etch stop layer. A dielectric(210) is formed on the amorphous carbon layer. The dielectric on the peripheral circuit region is etched by using the amorphous carbon layer as an etch stop layer to form a contact hole. The amorphous carbon layer of a lower surface of the contact hole is etched to expose the aluminium wire. An upper metal wire being contacted to the aluminium wire is formed on the dielectric including the contact hole.