| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same having reduced the short circuit failure rate between the bump electrodes by preventing the short circuit between bump electrodes through a bridge short-circuit portion due to a solder flow caused during a solder reflow process when the wetback process i.e. a manufacturing process of the semiconductor device is carried out and a solder is melted during the substrate mounting. <P>SOLUTION: The semiconductor device includes an electrode pad 14 disposed on the semiconductor substrate 12, an insulating film 16 that not only covers a surface of the semiconductor substrate 12 but also has an aperture to which the electrode pad 14 is exposed, a solder flow prevention layer 18 that covers the insulating layer 16, has an aperture to which the electrode pad 14 is exposed and to which the solder is not attached, and a bump electrode 32 which is disposed on the electrode pad 14 via a lower electrode 20 and which comprises the solder. Wherein, the solder flow prevention layer 18 is disposed on the entire region between the bump electrodes 32 so that the short circuit between the bump electrodes 32 is prevented. Thus, a method of manufacturing the semiconductor device is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
