| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing device for a group III nitride semiconductor by an Na flux method using a double container having a reaction container in a pressure container, in which the reaction container can be placed in the pressure container so that oxidation of Na can be prevented. <P>SOLUTION: The manufacturing device 1 for a group III nitride semiconductor is composed of a pressure container 101, a reaction container 102 placed inside the pressure container 101, a heating device 104a, 104b placed inside the pressure container 101 and heating the reaction container 102, and a glove box the inside of which is filled with argon gas. The pressure container 101 and the glove box are connected through a gate valve 105. Thus, the reaction container that is large and reusable can be placed inside the pressure container without oxidizing Na. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
