EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER

摘要

Provided is an epitaxial wafer manufacturing method wherein a carbon implanted layer is formed by implanting carbon ions, then, heat treatment is performed in an atmosphere containing ammonia or nitrogen by using a rapid heating/cooling (RTA) apparatus, and an epitaxial layer is formed on the heat-treated silicon wafer. By surely performing recovery heat treatment prior to the step of implanting carbon ions to form the carbon ion implanted layer and forming the silicon epitaxial layer on the implanted surface, an epitaxial wafer having high gettering performance can be manufactured at low cost without forming an epitaxial defect on the epitaxial layer.