发明名称 Photoelectric device grinding process and device grinding process
摘要 A photoelectric device grinding process comprising the following steps is disclosed. A wafer comprising a plurality of chip units is provided. Each chip unit has at least a photoelectric device disposed on a surface layer. A dielectric substrate is attached to the wafer with glue having a plurality of spacers therein such that the photoelectric devices face the dielectric layer. The spacers maintain a gap between the dielectric substrate and the wafer. Thereafter, the dielectric substrate surface away from the wafer or the wafer surface away from the dielectric substrate or both is ground. The grinding process is particularly suitable for preventing any possible damage to the photoelectric devices on a wafer.
申请公布号 US7456051(B2) 申请公布日期 2008.11.25
申请号 US20040710696 申请日期 2004.07.29
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 YEE KUO-CHUNG;CHEN CHIH-LUNG
分类号 H01L21/30;H01L21/304;H01L21/461;H01L21/68 主分类号 H01L21/30
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