| 摘要 |
The contact characteristic between the storage electrode and the storage electrode contact plug can be improved in only one storage electrode contact processing. The manufacturing process of the semiconductor device can be simplified. The photosensitive pattern is formed by forming the lower insulating layer having the bit line formed on the semiconductor substrate and by using the first exposure mask for the storage node contact. The second photosensitive pattern is formed by using the second exposure mask for the storage node contact on the structure. The stepped laminating structure of the second photosensitive pattern and the first photoresist pattern is formed where the outer side of the storage node contact region(110) become high. The storage electrode contact hole is formed by etching the lower insulating layer using a mask as the first and second photosensitive pattern of the stepped laminating structure. The storage electrode contact plug for burying the storage electrode contact hole(140) is formed and the storage electrode is formed to connect with the storage electrode contact plug.
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