发明名称 |
Flash memory device and method of fabricating the same |
摘要 |
Provided are a flash memory device and a method of fabricating the same. The method includes forming a first dielectric layer on an active region of a semiconductor substrate. A first conductive layer is formed on the semiconductor substrate having the first dielectric layer. A mask pattern is formed on the first conductive layer. Using the mask pattern as an etch mask, the first conductive layer is etched to form a first conductive pattern narrowing from its upper surface toward its middle portion. A second dielectric layer is formed on the semiconductor substrate having the first conductive pattern. A second conductive pattern crossing the active region adjacent to the first conductive pattern and partially covering the first conductive pattern is formed on the semiconductor substrate having the second dielectric layer.
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申请公布号 |
US2008268592(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070004698 |
申请日期 |
2007.12.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WEON-HO;HAN JEONG-UK;KIM YONG-TAE |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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