| 摘要 |
A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate ( 201 ). In an illustrative implementation, a laser diode is oriented on a GaN substrate ( 201 ) wherein the GaN substrate includes a GaN (0001) surface off-cut from the <0001> direction predominantly towards either the <1120> or the <11 00> family of directions. For a <11 20> off-cut substrate, a laser diode cavity ( 207 ) may be oriented along the <1 100> direction parallel to lattice surface steps ( 202 ) of the substrate ( 201 ) in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For <11 00> off-cut substrate, the laser diode cavity may be oriented along the <1 100> direction orthogonal to lattice surface steps ( 207 ) of the substrate ( 201 ) in order to provide a cleave laser facet that is aligned with the surface lattice steps.
|
