发明名称 |
InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND METHOD FOR MAKING THE SAME |
摘要 |
One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity. |
申请公布号 |
US2008265265(A1) |
申请公布日期 |
2008.10.30 |
申请号 |
US20070778213 |
申请日期 |
2007.07.16 |
申请人 |
LATTICE POWER (JIANGXI) CORPORATION |
发明人 |
XIONG CHUANBING;JIANG FENGYI;WANG LI;TANG YINGWEN;ZHENG CHANGDA;LIU JUNLIN;LIU WEIHUA;WANG GUPING |
分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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