发明名称 REMOVER AND CLEANING AGENT FOR SEMICONDUCTOR ETCHING RESIDUE
摘要 PROBLEM TO BE SOLVED: To provide an aqueous and semi-aqueous composition useful for removing residue after etching and ashing from a Cu low K dielectric semiconductor devices. SOLUTION: An aqueous and semi-aqueous composition, useful for removing residue after etching and ashing from a Cu low K dielectric semiconductor devices, contains a polyprotic acid buffer system, a fluoride system, water, and an water-miscible organic solvent for an aqueous composition, and may freely contain a chelating agent, a metal corrosion inhibitor and a surfactant. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008252100(A) 申请公布日期 2008.10.16
申请号 JP20080108333 申请日期 2008.03.21
申请人 GENERAL CHEMICAL PERFORMANCE PRODUCTS LLC 发明人 ROVITO ROBERT J;JOB FRANCIS W;LOWALEKAR VIRAL P;MUTHUKUMARAN ASHOK KUMAR
分类号 H01L21/304 主分类号 H01L21/304
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