| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of good temperature characteristics of a gate threshold voltage by reducing fluctuation amount of the gate threshold voltage at temperature change, relating to a MESFET made on a GaAs substrate. SOLUTION: The semiconductor device (GaAs field effect transistor 12) comprises a channel layer 15 on a GaAs substrate 11. The channel layer is implanted with impurities of high concentration, at the shallow portion of the upper layer part of the GaAs substrate. The impurity (silicon ion) is implanted into the upper layer part of the GaAs substrate so that a gate threshold voltage (Vth) becomes such dose amount as within a specified voltage range, based on the minimum acceleration voltage exceeding the energy level of the surface impurity of the GaAs substrate. COPYRIGHT: (C)2009,JPO&INPIT
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