| 摘要 |
PROBLEM TO BE SOLVED: To provide a depositing method capable of performing deposition with high uniformity in the film thickness of a substrate plane, and to provide a depositing device. SOLUTION: The depositing method forms a thin film on the substrate by arranging the substrate where the thin film is to be formed, and introducing raw material gas into a CVD (Chemical Vapor Deposition) device having a reaction chamber with an opposing wall to face the substrate. The concentration of a vapor phase intermediate, on the substrate, generated from the raw material gas by a chemical reaction is controlled, thereby allowing the temperature of the opposing wall to successively become higher from the upstream side to the downstream side of the raw material gas in the CVD device by cooling the temperature of the opposing wall independently from the temperature of the substrate. Then, the temperature of the opposing wall at the upstream of the raw material gas is kept to be lower than the generation temperature of the intermediate. The depositing device for performing this method are also provided. COPYRIGHT: (C)2009,JPO&INPIT
|
