发明名称 |
Forming a thin film structure |
摘要 |
A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.
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申请公布号 |
US7422770(B2) |
申请公布日期 |
2008.09.09 |
申请号 |
US20030693244 |
申请日期 |
2003.10.24 |
申请人 |
CHI MEI OPTOELECTRONICS CORP. |
发明人 |
TSUJIMURA TAKATOSHI;TOKUDA TOMOYA |
分类号 |
C23C16/00;C23C16/24;C23C16/44;C23C16/455;H01L21/205;H01L21/336;H01L29/786 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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