METHOD OF FORMING A CONTACT STRUCTURE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a contact structure and a method for fabricating a semiconductor device using the same are provided to secure a sufficient process margin by eliminating a process for forming a photoresist pattern having a hole type opening. A plurality of line patterns are formed on a substrate(100). A plurality of molding patterns(150a,150b) are formed between the line patterns and are separated from each other. A plurality of contact patterns are positioned between the molding patterns and between the line patterns. Each of the line patterns includes stacked conductive patterns, a capping mask, and spacers. The spacers are formed at sidewalls of the conductive patterns and a sidewall of the capping mask.