DUAL POLY GATE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A dual polygate of a semiconductor device and a manufacturing method thereof are provided to avoid degradation due to permeation of impurities by using a polysilicon germanium layer instead of a polysilicon layer. A silicon substrate(200) includes a PMOS region and an NMOS region. A first gate insulating layer is formed on the PMOS region. A second gate insulating layer is formed on the NMOS region. An N type polysilicon layer(218) is formed on the first gate insulating layer and the second gate insulating layer. A P type polysilicon germanium layer(206) is formed on the N type polysilicon layer of the PMOS region. A barrier layer, a metal-based layer(210), and a hard mask layer(212) are formed on the P type polysilicon germanium layer of the PMOS region and the N type polysilicon layer of the NMOS region.