| 摘要 |
A chemical mechanical polishing apparatus is provided to suppress a scratch by decreasing a frictional force applied between a polishing head and a wafer. A polishing head(212) is attached to an upper surface of a polishing table. A wafer with an insulation film is mounted on a polishing head(220). A slurry supply unit(230) supplies a slurry between the wafer and the polishing pad. A cooler(232) lowers a temperature of the slurry. A dresser(240) maintains a state of the polishing pad during a CMP(Chemical Mechanical Polishing) process. The cooler includes a heat exchanger(232-1), a controller(232-5), a coolant supply line(232-3), and a coolant drain line(232-4). The heat exchanger has a tube-like shape and encloses an outer periphery of the slurry supply unit and includes a cooling path(232-2), which is wound around the outer periphery of the slurry supply unit at a predetermined turn number. The controller controls a flow of the coolant according to a set temperature. The coolant supply line and the coolant drain line are connected to both ends of the cooling path, such that the coolant is received from the coolant supply unit.
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