| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus, its manufacturing method, and a camera for restricting deterioration of characteristics in vertical transfer efficiency and dark current due to delay of clock pulse waves caused by signal delay. SOLUTION: A separation is formed for each of picture elements in marix form in an imaging region 10 of a semiconductor substrate, and each photodiode 11 is formed and a vertical transfer path 12 for transmitting perpendicularly a signal charge, which is generated at a photodiode, is formed. On the semiconductor substrate, a transfer electrode 20, which crosses the imaging region and extends in a direction crossing the vertical transfer path for forming a predetermined potential in the vertical transfer path after applying a voltage, is formed. Each bus line (ϕ1-ϕ4) connected to the transfer electrode at its edge of the transfer electrode for applying the voltage to the transfer electrode is formed. In the constitution, the transfer electrode 20 has electric resistance with a high profile at a periphery of the imaging region and a low profile at a central portion of the imaging region. COPYRIGHT: (C)2008,JPO&INPIT
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