| 摘要 |
<p>A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AISb, AIAsSb, AIGaAsSb, AIPSb, AIGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.</p> |
| 申请人 |
LOCKHEED MARTIN CORPORATION;CAINE, ERNIE, J.;SCOTT, JEFFREY, W.;JONES, COLIN, E.;COCKRUM, CHARLES, A. |
发明人 |
CAINE, ERNIE, J.;SCOTT, JEFFREY, W.;JONES, COLIN, E.;COCKRUM, CHARLES, A. |
