| 摘要 |
There is provided a magnetic memory device including a first magnetoresistive element which takes a high-resistance-state when receiving a write current in a first direction, takes a low-resistance-state having a resistance value lower than that in the high-resistance-state when receiving a write current in a second direction opposite to the first direction, and receives a read current in a read operation, a second magnetoresistive element which takes one of the high-resistance and low-resistance-states in accordance with a magnetization state thereof, is fixed to the low-resistance-state when a direction of the read current is the same as the first direction, and is fixed to the high-resistance-state when the direction of the read current is the same as the second direction, and a control circuit which is connected to the first and second elements, and makes a read voltage applied to the first element equal to that applied to the second element.
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