METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride compound semiconductor light-emitting device having excellent emission characteristics at high yield; to provide a group III nitride compound semiconductor light-emitting device; and to provide a lamp.

SOLUTION: In the method comprising a step wherein a semiconductor layer composed of a group III nitride compound semiconductor containing Ga as a group III element is formed on a substrate 11 by sputtering, when the semiconductor layer is formed, the sputtering is performed while supplying nitrogen and argon into a chamber which is used for the sputtering.

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