INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND PROTECTION CIRCUIT FOR SECONDARY BATTERY,申请号KR20060054387-传众专利搜索

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发明名称	INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND PROTECTION CIRCUIT FOR SECONDARY BATTERY
摘要
申请公布号	KR100828270(B1)	申请公布日期	2008.05.07
申请号	KR20060054387	申请日期	2006.06.16
申请人		发明人
分类号	H01L21/336;H01L21/768;H01L29/72;H01M2/34	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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