MIXED-USE MEMORY ARRAY WITH DIFFERENT DATA STATES AND METHOD FOR USE THEREWITH
摘要
A mixed-use memory array with different data states and a method for use therewith are disclosed. In one preferred embodiment, a memory array is provided comprising a plurality of memory cells, each memory cell comprising a memory element comprising a switchable resistance material configurable to one of at least three resistivity states. A first set of memory cells uses X resistivity states to represent X respective data states, and a second set of memory cells uses Y resistivity states to represent Y respective data states, wherein X?Y.
申请公布号
WO2008016421(A3)
申请公布日期
2008.05.02
申请号
WO2007US13772
申请日期
2007.06.12
申请人
SANDISK 3D LLC;SCHEUERLEIN, ROY, E.;PETTI, CHRISTOPHER, J.