发明名称 Semiconductor Device and Manufacturing Method of the Same
摘要 It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
申请公布号 US2008099878(A1) 申请公布日期 2008.05.01
申请号 US20060884016 申请日期 2006.02.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YUKAWA MIKIO;FUJII GEN;SHOJI HIRONOBU
分类号 H01L29/66;H01L21/44 主分类号 H01L29/66
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