发明名称 |
VERFAHREN ZUM TRANSFER UND STAPELN VON HALBLEITERBAUSTEINEN |
摘要 |
A method is presented in which an active element, e.g. a semiconductor device, is embedded in a passive circuitry formed on a low-cost substrate, having good dielectric properties. After forming the active element on a first substrate, the active elements are singulated and transferred to a second substrate. The active element is bonded to this second substrate and the portion of the first substrate, on which this active element is created, is removed selectively to the active element and the low-cost substrate. On this second substrate passive circuitry may be present or it can be formed after the attachment of the active element. The passive circuitry is interconnected to the active element or other components or dies present on the low-cost substrate. |
申请公布号 |
DE60129793(T2) |
申请公布日期 |
2008.04.30 |
申请号 |
DE2001629793T |
申请日期 |
2001.01.29 |
申请人 |
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW;UMICORE |
发明人 |
BORGHS, STAF;BEYNE, ERIC;VANDERSMISSEN, RAF |
分类号 |
H01L21/78;H05K3/00;H01L21/335;H01L21/68;H01L23/538;H01L23/66;H01L25/00;H01L31/18 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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