SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a fabricating method thereof are provided to suppress corner rounding phenomenon of a resist pattern by forming linear patterns for gate electrodes on an active region and an isolation region. An isolation region(102) is formed in a semiconductor substrate(101), and active regions(103a,103b) are surrounded by the isolation region. A first gate electrode(105) is formed on the isolation region and the active region, and has a first region on the isolation region, in which the first region has a pattern width in a gate length direction larger than that of the first gate electrode on the active region. The first region has a part having a film thickness different from that of the first gate electrode on the active region. The first region of the first gate electrode is a gate contact region(105a) or a wiring region(105b).