摘要 |
This invention provides a semiconductor substrate with an electrode formed thereon. The electrode contains at least silver and a glass frit, and has a multilayer structure comprising a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer having a single or multilayer structure and disposed on the first electrode layer. The upper electrode layer is a fired product of an electroconductive paste having a total silver content of not less than 75% by weight and not more than 95% by weight. The proportion of the content of silver particles having an average particle diameter of not less than 4 µm and not more than 8 µm in the upper electrode layer to the total content of silver in the upper electrode layer is higher than the proportion of the content of silver particles having an average particle diameter of not less than 4 µm and not more than 8 µm in first electrode layer to the total content of silver in the first electrode layer. According to the above constitution, an electrode, which has a high aspect ratio and is less likely to cause troubles such as disconnection, can be formed on the semiconductor substrate in a simple manner. |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;SHIN-ETSU CHEMICAL CO., LTD.;ISHIKAWA, NAOKI;OJIMA, SATOYUKI;OHTSUKA, HIROYUKI;WATABE, TAKENORI;SAISU, SHIGENORI;UEGURI, TOYOHIRO |
发明人 |
ISHIKAWA, NAOKI;OJIMA, SATOYUKI;OHTSUKA, HIROYUKI;WATABE, TAKENORI;SAISU, SHIGENORI;UEGURI, TOYOHIRO |