发明名称 A non-volatile, electrically-programmable memory with a plurality of storage densities and data transfer speeds
摘要 A solid-state mass storage device (105, 100; 400, 415, 420) is provided. The solid-state mass storage device defines a storage area (100; 415) adapted to store data; the storage area is adapted to be exploited for storing data with a first storage density at a first data transfer speed. The storage area comprises at least a first storage area portion (120) and a second storage area portion (130). The solid-state mass storage device further includes accessing means (105; 420, 440) adapted to exploit the first storage area portion for storing data with a second storage density at a second data transfer speed, and adapted to exploit the second storage area portion for storing data with a third storage density and a third data transfer speed. The second storage density is lower than the third storage density, which is in turn lower than or equal to the first storage density; the second data transfer speed is higher than the third data transfer speed, which is in turn higher than or equal to the first data transfer speed.
申请公布号 EP1892720(A1) 申请公布日期 2008.02.27
申请号 EP20060119479 申请日期 2006.08.24
申请人 STMICROELECTRONICS S.R.L.;HYNIX SEMICONDUCTOR INC. 发明人 MICHELONI, RINO;RAVASIO, ROBERTO
分类号 G11C11/56;G11C16/10 主分类号 G11C11/56
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