| 摘要 |
There are provided a white light emitting device of high luminous efficiency prevented from luminance deterioration even in large electric current range, and a method for manufacturing the same with high production yield. The white light emitting device ( 1 ) is composed of a blue LED element ( 4 ) and an oxide layer ( 8 ) containing a fluorescent material which is integrated with the blue LED element ( 4 ). In the blue LED element ( 4 ), a p-side electrode ( 11 ) is formed on a surface of a p-type layer of epitaxial layers ( 6 ) formed by laminating GaN based compound semiconductor layers on a surface of a light transmitting crystal substrate ( 3 ), and an n-side electrode ( 10 ) is formed on a bottom surface of a recessed portion ( 9 ) which is an n-type layer exposed by selectively etching a part of the p-type layer and the light emitting layer. The oxide layer ( 8 ) is formed by sintering a YAG fluorescent material and a glass binder containing mainly SiO<SUB>2</SUB>, B<SUB>2</SUB>O<SUB>3 </SUB>and PbO for binding the fluorescent material. The white light emitting device emits white light to the out side by converting blue light emitted from the blue LED element in the oxide layer ( 8 ).
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