| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which has an excellent writing property and an excellent electric charge storing property and can reduce a writing voltage. <P>SOLUTION: The nonvolatile semiconductor memory includes a semiconductor layer or a semiconductor substrate which has a channel forming region 14 between a pair of separately formed impurity regions 18a and 18b, a first insulating layer 16 disposed above the semiconductor layer or the semiconductor substrate and on a different position from the channel forming region 14, a plurality of layers 20 at least one of which is an insulating layer, includes traps for storing electric charge, and is made of different nitride compounds, a second insulating layer 22, and a control gate 24. <P>COPYRIGHT: (C)2008,JPO&INPIT |
