A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to shorten a manufacturing process by forming stably a contact for connecting electrically a metal line. An insulating layer(220) is formed on a conductive layer(210). A contact hole is formed by etching selectively the insulating layer. A barrier metal layer(240) is formed in the inside of the contact hole and at a lower part of the contact hole. A polysilicon/metal layer(250) is formed in the inside of the barrier metal layer. A silicidation process is performed by processing thermally a thermal process of the polysilicon/metal layer. A contact is formed in the inside of the barrier metal layer. The barrier metal layer includes a titanium/titanium nitride layer.