INTEGRATED DEVICE AND METHOD THEREOF

摘要

An integrated device and a manufacturing method thereof are provided to widen a tuning range and reduce parasitic resistance happening in case of discrete connection by integrally manufacturing an FBAR(Film Bulk Acoustic Resonator) and a variable capacitor. An integrated device includes a substrate(511), a resonance unit(510), a driving electrode layer(514), a first electrode layer(525), and a second electrode layer(524). The resonance unit is formed on the substrate. The driving electrode layer is formed on the substrate by being separated from the resonance unit. The first electrode layer is separated upward from the substrate, and is formed in the shape corresponding to the resonance unit. The second electrode layer is separated upward from the substrate, and is formed in the shape corresponding to the driving electrode layer. A step is between the first electrode layer and the second electrode.