发明名称 |
RF POWER TRANSISTOR DEVICE WITH HIGH PERFORMANCE SHUNT CAPACITOR AND METHOD THEREOF |
摘要 |
<p>An integrated shunt capacitor comprises a bottom plate (62), a capacitor dielectric (92) overlying a portion of the bottom plate, a top plate (64) overlying the capacitor dielectric, a shield (74) overlying a portion of the top plate; and a metallization feature (70) disposed about and isolated from at least two sides of the top plate, the metallization feature for coupling the bottom plate to the shield. In one embodiment, an RF power transistor has an impedance matching network including an integrated shunt capacitor as described herein.</p> |
申请公布号 |
WO2007146899(A2) |
申请公布日期 |
2007.12.21 |
申请号 |
WO2007US70930 |
申请日期 |
2007.06.12 |
申请人 |
FREESCALE SEMICONDUCTOR INC.;REN, XIAOWEI;LAMEY, DANIEL, J. |
发明人 |
REN, XIAOWEI;LAMEY, DANIEL, J. |
分类号 |
H01G4/228 |
主分类号 |
H01G4/228 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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