MANUFACTURING METHOD OF NITRIDE COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

A method for manufacturing a nitride semiconductor substrate is provided to reduce the time of a photo chemical wet etching process by using a groove formed on the nitride semiconductor substrate. A groove(23) is formed on a heterogeneous substrate(11). An InxGa1-xN(0<x 1) layer(12) is grown on the heterogeneous substrate on which the groove is formed. The GaN layer(13) is grown on the InxGa1-xN(0<x 1) layer. The InxGa1-xN(0<x 1) layer is removed to separate the GaN layer from the heterogeneous substrate. The heterogeneous substrate is a sapphire substrate. The InxGa1-xN(0<x 1) layer is removed by a photo chemical wet etching process. The groove formed on the heterogeneous substrate includes a groove passing through the heterogeneous substrate.