发明名称 Method of manufacturing a quantum-dot element
摘要 A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.
申请公布号 US7303937(B2) 申请公布日期 2007.12.04
申请号 US20050187829 申请日期 2005.07.25
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHEN HSUEH-SHIH;LO DAI-LUON;CHANG GWO-YANG;CHEN CHIEN-MING
分类号 H01L21/00 主分类号 H01L21/00
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