MANUFACTURING METHOD OF TRANSPARENT FET EPITAXIAL GROWN GA2O3 THIN FILM ON GAN/AL2O3 AND THE FET

摘要

A method of manufacturing a transparent field effect transistor and the transistor manufactured by the same are provided to deposit a Ga2O3 film on an upper surface of a GaN film in a chemically stable state, thereby preventing contamination at an interface between the GaN film and the Ga2O3 film. A GaN film is deposited on a sapphire substrate, and then a source/drain region is formed on the GaN film. A gate insulating layer is formed by epitaxially depositing a Ga2O3 film on the GaN film at a feed rate of oxygen of 1 to 15sccm. A transparent conductive oxide layer is formed on the gate insulating layer. The source/drain region is made of transparent conductive oxide.