发明名称 |
SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF |
摘要 |
A semiconductor structure is disclosed, including a substrate having therein a first well of a first conductivity type and a second well of a second conductivity type, a first MOS transistor of the first conductivity type and a second MOS transistor of the second conductivity type. The first MOS transistor is disposed on the second well, including a gate structure on the second well and a strained layer of the first conductivity type in an opening in the second well beside the gate structure. The difference between the cell parameter of a portion of the strained layer near the bottom of the opening and that of the substrate is less than the difference between the cell parameter of a portion of the strained layer apart from the bottom of the opening and that of the substrate. The second MOS transistor is disposed on the first well.
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申请公布号 |
US2007235770(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
US20060399827 |
申请日期 |
2006.04.07 |
申请人 |
TING SHYH-FANN;HUANG CHENG-TUNG;HUNG WEN-HAN;JENG LI-SHIAN;LEE KUN-HSIEN;CHENG TZYY-MING;WU JING-CHANG;SHEN TZERMIN |
发明人 |
TING SHYH-FANN;HUANG CHENG-TUNG;HUNG WEN-HAN;JENG LI-SHIAN;LEE KUN-HSIEN;CHENG TZYY-MING;WU JING-CHANG;SHEN TZERMIN |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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