Capacitor Film Forming Material

摘要

Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R¹R²N)₄ or Hf(OR³)_4-n(R⁴)_n and the content of Nb as an inevitable compound is 1 ppm or less.